Silicon carbide crystal growth furnace

The silicon carbide crystal growth furnace is a key equipment used for preparing these two types of wide bandgap semiconductor materials.

1. Growth method:

Physical vapor transfer (PVT): The most commonly used method for growing SiC crystals, which involves sublimating SiC raw materials at high temperatures and transferring them to seed crystals for crystallization.

2. Application:

Used for manufacturing power electronic devices, RF devices, etc.

3. Structural composition

The growth of silicon carbide crystals is usually carried out by physical vapor transfer (PVT), and the main components of its growth furnace include:

3.1 Furnace body

Material: Usually made of high-purity graphite or other high-temperature resistant materials, capable of withstanding temperatures above 2000 ° C.
Function: Provide a sealed growth environment to prevent external pollution.

3.2 Heating System

Heating method: induction heating or resistance heating.
Function: Provide a high-temperature environment to sublime SiC raw materials and transport them to the seed crystal for crystallization.
Temperature range: usually between 2000 ° C and 2400 ° C.

3.3 Raw material area and seed crystal area

Raw material area: Place high-purity SiC powder as raw material for crystal growth.
Seed area: Place SiC seed crystals as the starting point for crystal growth.
Temperature gradient: Accurate temperature gradient control is required between the raw material area and the seed crystal area to promote raw material sublimation and crystal growth.

3.4 Vacuum and Gas Control System

Vacuum system: used to maintain a high vacuum environment inside the furnace and reduce impurity pollution.
Gas system: Introduce inert gas (such as argon) or reactive gas to control the atmosphere of the growth environment.

3.5 Cooling System

Function: After the crystal growth is completed, slowly cool down to avoid crystal cracking.
Method: Water cooling or air cooling.

3.6 Control System

Function: Accurately control parameters such as temperature, pressure, and gas flow rate to ensure the stability and consistency of crystal growth.
Composition: including temperature sensors, pressure sensors, computer control systems, etc.